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ALM-1106
GPS Low Noise amplifier with Variable bias current and Shutdown function
Data Sheet
Description
Avago Technologies's ALM-1106 is a LNA designed for GPS/ISM/Wimax applications in the (0.9-3.5)GHz frequency range. The LNA uses Avago Technologies's proprietary GaAs Enhancement-mode pHEMT process to achieve high gain operation with very low noise figures and high linearity. Noise figure distribution is very tightly controlled. Gain and supply current are guaranteed parameters. A CMOS compatible shutdown pin is included to turn the LNA off and provide a variable bias. The ALM-1106 LNA is useable down to 1V operation. It achieves low noise figures and high gain even at 1V, making it suitable for use in critical low power GPS/ISM band applications.
Features
* Advanced GaAs E-pHEMT * Low Noise: 0.8 dB typ * High Gain : 14.3 dB typ * Low component count * High IIP3 and IP1dB * Wide Supply Voltage: 1V to 3.6V * Shutdown current : < 0.1uA * CMOS compatible shutdown pin (VSD) current @ 2.85V : 90uA * Adjustable bias current via one single external resistor/voltage * Small Footprint: 2x2mm2
VDD
Simplified Schmatic
VSD
* Low Profile: 1.1mm typ * Ext matching for non-GPS freq band operation
BIAS
Specifications (25 deg): At 1.575GHz, 2.85V 8mA (Typ)
* Gain = 14.3 dB (Typ)
C C2 RF_OUT
RF_IN C C1
* NF = 0.8 dB (Typ) * IIP3 = 4.7 dBm (Typ) * IP1dB = 1.8 dBm (Typ) * S11 = -11.8 dB (Typ) * S22 = -12.4 dB (Typ)
Pin1
GND
Amplifier2 AMP1
Surface Mount 2.0 x 2.0 x 1.1 mm3
O
Pin Configuration
Pin6
Typical performance @ 1.0V supply
S21 = 12.3dB NF = 1.0dB Ids = 3.6mA
Note: Measurements obtained using demoboard described in Figure 4.
AY WW
Note: Packagemarking providesOrientation andidentification "A"=ProductCode "Y"=Year "WW"=WorkWeek
Pin5 Pin4
Pin2 Pin3
BottomView LNAI/O's: 1.NC 4.VSD 2.RF_IN 5.RF_OUT 3.NC 6.VDD BOTTOMPADDLE:GND
Absolute Maximum Ratings [1]
Symbol
VDS IDS Pdiss Pin max. TCH TSTG qch_b
Parameter
Drain - Source Voltage[2] Drain Current[2] Total Power Dissipation [3] RF Input Power Channel Temperature Storage Temperature Thermal Resistance [4]
Units
V mA mW dBm C C C/W
Absolute Maximum
3.6 15 54 +10 150 -65 to 150 232
Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. . Assuming DC quiescent conditions. 3. Board (package belly) temperature TB is 5C. Derate 4.3mW/C for TB > 137 C. 4. Channel-to-board thermal resistance measured using 150C Liquid Crystal Measurement method.
Product Consistency Distribution Charts [5,6]
4000 4000
3000
Stdev=0.4
3000
Stdev=0.1
2000
-3Std
+3Std
2000
+3Std
1000
1000
0 12 13 14 15 16 17
0 0 0.3 0.6 0.9 1.2 1.5
Figure 1. Gain @ 1.575GHz; LSL = 12.7dB, Nominal = 14.3dB, USL = 15.8dB 3000 2500 2000 1500 1000 500 0 3 5 7 9 11 13 15 +3Std Stdev=1.8
Figure 2. NF @ 1.575GHz; Nominal = 0.8dB, USL = 1.3dB
Figure 3. Ids @ 1.575GHz; Nominal = 8mA, USL = 13mA Notes: 5. Distributiondatasamplesizeis10Ksamplestakenfrom3differentwafersand3differentlots.Futurewafersallocatedtothisproductmayhavenominalvaluesanywherebetweentheupperandlowerlimits. 6. Measurementsaremadeonproductiontestboard,whichrepresentsatrade-offbetweenoptimalGain,NF,IIP3,IP1dBandVSWR.Circuitlosseshave beende-embeddedfromactualmeasurements.
Electrical Specifications
TA = 25 C, DC bias for RF parameter is VDD = VSD = +2.85V @ 8mA (unless otherwise specified)
Table 1. Performance table at nominal operating conditions
Symbol
G NF IP1dB IIP3 S11 S22 Ids Ish Vds IP1dB1710M IIP3OUT
VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz - Typical Performance Parameter and Test Condition
Gain Noise Figure Input 1dB Compressed Power Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz) Input Return Loss Output Return Loss Supply Current Shutdown Current @ VSD = 0V Supply Voltage Out of Band IP1dB (DCS 1710MHz) blocking Out of Band IIP3 (DCS 1775MHz & 1950MHz)
Units
dB dB dBm dBm dB dB mA uA V dBm dBm
Min.
12.7 -
Typ
14.3 0.8 1.8 4.7 -11.8 - 12.4 8 0.1 2.85 2.9 5.5
Max.
15.8 1.3
13
Table 2 - Typical performance at low operation voltages with R1 (see Fig 5) set to 0 Ohm
Symbol
G NF IP1dB IIP3 S11
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz - Typical Performance (VSD=VDD, R1=0 Ohm) Parameter and Test Condition
Gain Noise Figure Input 1dB Compressed Power Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz) Input Return Loss
Units
dB dB dBm dBm dB
VDD=2V
15 0.8 -1.4 7.3 -13.8
VDD=1.5V
14.2 0.9 -2.4 4.9 -11.5
VDD=1.0V
12.3 1 -3.8 5.2 -8
S Ids Ish Vds IP1dB1710M IIP3OUT
Output Return Loss Supply Current Shutdown Current @ VSD = 0V Supply Voltage Out of Band IP1dB (DCS 1710MHz) blocking Out of Band IIP3 (DCS 1775MHz & 1950MHz)
dB mA uA V dBm dBm
-15.5 13 0.1 -0.3 8.7
-14.5 7.5 0.1 1.5 -1.9 5.8
-11.7 3.6 0.1 1.0 -.9 3
3
GND
VDD
H 0.010 W 0.0220 e 3.48
0.1F 12 / / 33nH
6.8pF 4.7nH RF IN 5.6nH 18k 6.8pF 100pF RF OUT
10nH
GPS LNA
MAR 2005 TL. Avago Technologies
Figure 4. Demoboard and Application Circuit Components
+VDD C C3 C=0.1uF
GND
SD
PRL PRL1 R=12Ohm L=33nH Johanson0402 C C5 C=6.8pF
C C4 C=6.8pF VSD R R1 R=18kOhm BIAS
L L3 L=4.7nH R= TokoLL1005
RF_IN L L1 L=5.6nH Johanson0402 C C2
RF_OUT
L L2 L=10nH Johanson0402
C C1
Amplifier2 AMP1
Notes * L1 and L form the input matching network. The LNA module has a integrated coupling and DC-blocking capacitors at the input and output. Best noise performance is obtained using high-Q wirewound inductors. This circuit demonstrates that low noise figures are obtainable with standard 040 chip inductors. Replacing L1, L and L3 with high-Q wirewound inductors (eg. Cilcraft 040CS series) will yield 0.1dB lower NF and 0.6dB higher Gain. * L3 is an output matching inductor. * C5 is a RF bypass capacitor. * PRL1 is a network that isolates the measurement demoboard from external disturbances. C3 and C4 mitigates the effect of external noise pickup on the VSD and VDD lines. These components are not required in actual operation. * Bias control is achieved by either varying the VSD voltage without R1 or fixing the VSD voltage to VDD and varying R1. Typical value for R1 is 18k Ohm for 8mA total current at VDD=+.85V. * Higher gain and IP3 performance can be obtained by increasing the supply current. This can be achieved by reducing the value for R1 to obtain desired current. * For low voltage operation such as 1.5V or 1.0V, the R1 may be omitted and VSD connected directly to the supply pins.
Figure 5. Demoboard schematic
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ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25C unless specified otherwise)
16 15 14 0.95 0.9 0.85 0.8 1.575GHz 0.75 0.7 2.4 2.6 2.8 Vdd(V) 3 3.2 3.4 2.4 2.6 2.8 Vdd(V) 3 3.2 3.4 2GHz 2.4GHz
Gain(dB)
12 11 10 9 1.575GHz 2GHz 2.4GHz
Figure 6. Gain vs Vdd vs Freq
Figure 7. NF vs Vdd vs Freq
NF(dB)
13
12 10
6 5 IP1dB(dBm) 4 3 2 1 0
2.4 2.6 2.8 Vdd(V) 3 3.2 3.4
8
IIP3(dBm)
6 4 2 0 1.575GHz 2GHz 2.4GHz
1.575GHz 2GHz 2.4GHz
2.4
2.6
2.8 Vdd(V)
3
3.2
3.4
Figure 8. IIP3 vs Vdd vs Freq
Figure 9. IP1dB vs Vdd vs Freq
12 10 8
Ids(mA)
6 1.575GHz 4 2 0 2.4 2.6 2.8 Vdd(V) 3 3.2 3.4 2GHz 2.4GHz
Figure 10. Ids vs Vdd vs Freq
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ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25C unless specified otherwise)
16 15 Gain(dB) 14 13 12 11 2.4 2.6 2.8 Vdd(V) Figure 11. Gain vs Vdd vs Temp Figure 12. NF vs Vdd vs Temp 3 3.2 3.4 25deg -40deg 85deg 1.4 1.2 1 NF(dB) 0.8 0.6 0.4 0.2 0 2.4 2.6 2.8 Vdd(V) 3 3.2 3.4 25deg -40deg 85deg
7 6 5 4 3 2 1 0 2.4 2.6 2.8 Vdd(V) Figure 13. IIP3 vs Vdd vs Temp 3 3.2 3.4 25deg -40deg 85deg IP1dB(dBm) IIP3(dBm)
3 2.5 2 1.5 1 0.5 0 2.4 2.6 2.8 Vdd(V) Figure 14. IP1dB vs Vdd vs Temp 3 3.2 3.4 25deg -40deg 85deg
12 11 10 Ids(mA) 9 8 7 6 5 4 2.4 2.6 2.8 Vdd(V) Figure 15. Ids vs Vdd vs Temp 3 3.2 3.4 25deg -40deg 85deg
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ALM-1106 Typical Scattering Parameters at 25C, VDD = 2.85V, IDS = 8 mA
Freq. (GHz) 0.1 0.5 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 S11 Mag. 0.998 0.946 0.866 0.843 0.821 0.8 0.78 0.757 0.731 0.705 0.683 0.663 0.643 0.623 0.603 0.583 0.563 0.543 0.522 0.434 0.334 0.302 0.297 0.274 0.254 0.211 0.204 0.189 0.193 0.06 Ang. -4.7 -23.5 -40.4 -44.4 -48.2 -52 -55.8 -59.7 -63.4 -66.8 -69.7 -71.6 -73.4 -75.3 -77.2 -79 -80.9 -82.8 -85.3 -105.2 -119.5 -132.1 -141.8 -157.1 -170.1 178.7 165.4 137.1 117.3 90.6 S21 (dB) 15.01 14.62 13.72 13.47 13.20 12.95 12.69 12.42 12.13 11.83 11.55 11.29 10.99 10.48 10.25 10.01 9.77 9.49 9.23 7.95 6.47 6.25 5.50 4.44 3.63 2.82 1.89 1.56 1.03 0.87 Mag. 5.633 5.381 4.854 4.714 4.573 4.44 4.31 4.178 4.039 3.905 3.78 3.669 3.544 3.343 3.253 3.165 3.079 2.983 2.895 2.498 2.105 2.054 1.883 1.667 1.519 1.383 1.243 1.197 1.16 1.105 Ang. 176.7 153.1 134.1 129.7 125.5 121.5 117.6 113.6 109.7 106.1 102.9 99.5 96 97 93.5 90.2 87 83.8 81.1 66.6 57.3 48.8 33.1 23.9 16.1 6.3 -0.7 -5.4 -14.4 -. S12 (dB) -47.96 -34.42 -29.90 -29.37 -28.64 -27.96 -27.33 -26.94 -26.38 -26.02 -25.51 -25.19 -24.73 -24.58 -24.15 -23.74 -23.48 -23.10 -22.73 -21.21 -20.26 -18.42 -16.95 -15.97 -15.04 -14.11 -13.64 -13.7 -1.88 -1.40 Mag. 0.004 0.019 0.032 0.034 0.037 0.04 0.043 0.045 0.048 0.05 0.053 0.055 0.058 0.059 0.062 0.065 0.067 0.07 0.073 0.087 0.097 0.12 0.142 0.159 0.177 0.197 0.208 0.17 0.7 0.4 Ang. 89.2 78.6 71.8 70.5 69.3 68.5 67.4 66.5 65.7 64.8 64.7 63.9 63.1 66.3 65.5 64.6 63.8 63 62.3 56.9 54 53.7 43.4 38 33.7 25.3 16.7 1.7 9.5 4.7 S22 Mag. 0.526 0.503 0.475 0.468 0.459 0.451 0.443 0.435 0.428 0.421 0.414 0.408 0.399 0.398 0.398 0.397 0.396 0.396 0.395 0.345 0.324 0.271 0.265 0.259 0.26 0.249 0.263 0.306 0.31 0.314 Ang. -5 -19 -31.9 -34.9 -37.9 -40.5 -43.2 -45.8 -48.2 -50.7 -52.8 -55.5 -58 -58.8 -59.6 -60.3 -61.1 -62.1 -62.7 -74.4 -86.8 -108 -113.3 -118.6 -133.2 -142.7 -154.7 -171.3 179.8 170.8
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ALM-1106 Typical Noise Parameters, VDD = 2.85V, IDS = 8mA
Freq (GHz) 0.5 0.9 1.5 1.7 2 2.4 3 3.5 4 4.5 5 5.5 5.8 Fmin (dB) 0.53 0.65 0.8 0.82 0.91 0.93 1.21 1.33 1.69 1.73 1.82 1.98 .37 Gopt Mag. 0.64 0.69 0.71 0.69 0.68 0.64 0.52 0.44 0.35 0.31 0.32 0.34 0.43 Gopt Ang. 13.8 32.2 47.4 58.1 59.5 71.3 99.2 135.8 161.3 171.3 -179.6 -171.2 -174.8 Rn/50 0.41 0.28 0.24 0.22 0.23 0.27 0.16 0.12 0.08 0.06 0.06 0.08 0.14 NF @ 50dB 1.46 1.07 1.22 1.14 1.1 1.72 1.45 1.6 1.27 1.47 1.65 2.16 .88
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Package Dimensions
TOPVIEW 2.000.10 PIN1 2.000.10 O AY WW (4X)0.65 1.66 4 3 (6X)0.10 (6X)0.43 SIDEVIEW 1.100.10 6 BOTTOM VIEW 0.40 R0.15
(6X)0.36
PIN1
(3X)0.94
Device Orientation
REEL
Existing Thermal Ground to pad clearance = 0.16mm Samsung Thermal Ground to pad min clearance = 0.5mm
CARRIER TAPE USER FEED DIRECTION COVER TAPE
Tape Dimensions
Notes: 1. Measured from centerline of sprocket hole to centerline of pocket . Cumulative tolerance of 10 sprocket holes is 0.0 All dimensions in millimeters unless otherwise stated.
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Reel Dimensions
178.01.0
FRONT SEEDETAIL"x" FRONTVIEW RECYCLELOGO 7.9-10.9** +1.5* 8.4 -0.0 FRONT
BACK
65 R10.65 R5.2 Slothole'b'
45
BACK
Slothole'o' EMBOSSEDRIBS RAISED:0.25mm,WIDTH:1.25mm BACKVIEW 51.20.3 14.4* MAX
178.01.0 55.00.5
60
Part Number Ordering Information
Part Number
ALM-1106-TR1G ALM-1106-TR2G ALM-1106-BLKG
No. of Devices
3000 10000 100
Container
7" Reel 13" Reel antistatic bag
For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 005-008 Avago Technologies. All rights reserved. Obsoletes AV01-008EN AV0-1469EN - August 6, 008
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